Memoria Flash industrial

DOM USB 4GB SLC

Ref.Mozaïk Storage : PMS-4161

SFUI4096J1AE2TO-C-QT-2B1-STD de la gama U-500 Series de Swissbit AG. También disponible en otras capacidades y rangos de temperatura. No dude en ponerse en contacto con nosotros:

PRESUPUESTO

DEVOLUCION DE LLAMADA

Descripción

Ref.Fabricante : SFUI4096J1AE2TO-C-QT-2B1-STD
Gama : U-500 Series
Fabricante : Swissbit AG
Temp. de trabajo : 0°C ~ +70°C
Factor de forma : 2.00mm pitch

Especificaciones del producto

Fabricante Swissbit AG
Referencia de producto del fabricante SFUI4096J1AE2TO-C-QT-2B1-STD
Subcategoria DOM
Interfaz USB 3.1
Tipo de Flash SLC
Factor de forma 2.00mm pitch
Capacidad 4 GB
Velocidad de lectura (max.) 53 MB/s
Velocidad de escritura (max.) 32 MB/s
TBW (max.) 394 TB
MTBF 3 000 000 horas
Herramienta S.M.A.R.T. Sí
PowerLossProtector Sí
Temperatura de trabajo 0°C ~ +70°C
Temperatura de almacenamiento -40°C ~ +85°C
Chipset Industrial Grade
Alimentación 3.3 V
5.0 V
Vibraciones 50G
Choques 1500G
Información adicional USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed
5Gb/s burst)
Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
Dimension of 26.65 x 36.8mm
2.54mm or 2.00mm connector with keyed pin9
Mounting hole electrically not connected (optional grounded)
Fixed drive (USB hard drive - optional removable)
LED for operation indication
Write protect switch (optional)
Diagnostic features with Life Time Monitoring tool support
Firmware update in field possible
High performance USB3.1 specification
Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers)
Up to 90 MBytes/s sequential write and 175 MBytes/s read speed
Power Supply: (Low-power CMOS technology)
3.1 to 5.5V operating voltage
Optimized FW algorithms especially for high read access and long data retention applications
Patented power-off reliability technology
Near Miss ECC technology
Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
Read Disturb Management
The read commands per block are monitored and the content is refreshed when critical levels are reached.
Wear Leveling technology
Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed.
Data Care Management
The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
UBER <10-17
High reliability
SLC NAND Flash with highest program erase cycles per block
Certificados EMC/ CE / FCC / RoHS / WEEE/ REACh
Peso 5 g
Dimensiones 36.8mm x 26.65mm