Memoria Flash industrial

DOM USB 8GB pSLC

Ref.Mozaïk Storage : PMS-4120

SFUI008GJ1AE2TO-I-GS-2AP-STD de la gama U-56 Series everbit de Swissbit AG. También disponible en otras capacidades y rangos de temperatura. No dude en ponerse en contacto con nosotros:

PRESUPUESTO

DEVOLUCION DE LLAMADA

Descripción

Ref.Fabricante : SFUI008GJ1AE2TO-I-GS-2AP-STD
Gama : U-56 Series everbit
Fabricante : Swissbit AG
Temp. de trabajo : -40°C ~ +85°C
Factor de forma : 2.54mm pitch

Especificaciones del producto

Fabricante Swissbit AG
Referencia de producto del fabricante SFUI008GJ1AE2TO-I-GS-2AP-STD
Subcategoria DOM
Interfaz USB 2.0
Tipo de Flash pSLC
Factor de forma 2.54mm pitch
Capacidad 8 GB
Resistencia en ciclos P/E (max.) 20 000 ciclos P/E
Velocidad de lectura (max.) 170 MB/s
Velocidad de escritura (max.) 96 MB/s
TBW (max.) 166 TB
MTBF 3 000 000 horas
Herramienta S.M.A.R.T. Sí
PowerLossProtector Sí
Temperatura de trabajo -40°C ~ +85°C
Temperatura de almacenamiento -40°C ~ +85°C
Chipset Industrial Grade
Alimentación 3.3 V
5.0 V
Vibraciones 50G
Choques 1500G
Información adicional USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
Compliant with USB specification 3.1 Gen 1 (SuperSpeed
5Gb/s burst)
Backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
2.54mm or 2.00mm connector with keyed pin9
Mounting hole electrically not connected (optional grounded)
Fixed drive (USB hard drive - optional removable)
LED for operation indication
Write protect switch (optional)
Diagnostic features with Life Time Monitoring tool support
Firmware update in field possible
Up to 1100 IOPS write and 3200 IOPS read (4KByte transfers)
Up to 110 MBytes/s sequential write and 175 MBytes/s read speed
Power Supply: (Low-power CMOS technology)
3.1 to 5.5V operating voltage
Optimized FW algorithms especially for high read access and long data retention applications Patented power-off reliability technology
Near Miss ECC technology
Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
Read Disturb Management
The read commands per block are monitored and the content is refreshed when critical levels are reached.
Wear Leveling technology
Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result
the maximum write endurance of the device is guaranteed.
Data Care Management
The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
UBER <10-16
High reliability
Pseudo SLC Flash with 20
000 Program/Erase Cycles and everbit Reduced Write Amplification Designed with sophisticated firmware architecture for industrial and NetCom market especially 24/7 application like networking - base
Certificados EMC/ CE / FCC / RoHS / WEEE/ REACh
Peso 5 g
Dimensiones 36.8mm x 26.65mm